Modeling the Temperature-Dependent Characteristics of MOSFETs for
Circuit Simulation

Daniel Foty
Gilgamesh Associates
Fletcher VT  05444   USA
dfoty@sover.net
http://www.sover.net/~dfoty


Most analytical MOSFET modeling and CMOS circuit simulation are carried
out at room temperature; higher temperatures generally occur due to
integrated circuit power dissipation and are usually inspected on a
"sanity check" basis.  Thus, the temperature-dependent behavior in
various analytical MOSFET descriptions tends to be somewhat sketchy.

This presentation will review the various approaches to modeling the
temperature-dependent behavior of MOSFETs which have been adopted for
use in SPICE circuit simulation.  As with most aspects of MOS modeling,
these methods involve a difficult journey from physical understanding
to analytical descriptions which are suitable for use in a circuit
simulator.  Practical aspects of coping with the available infrastructure
will be considered.